| PART |
Description |
Maker |
| HYS72D128321GBR-5-B HYS72D128321GBR-6-B HYS72D2562 |
184 - Pin Registered Double-Data-Rate SDRAM Module
|
Qimonda AG
|
| HYS72D64301 |
184 - Pin Registered Double-Data-Rate SDRAM Module
|
Qimonda
|
| HYS72D256520GR-7-A HYS72D256520GR |
184 Pin Registered Double Data Rate SDRAM Modules
|
INFINEON[Infineon Technologies AG]
|
| HYS72D64300HU-5-C |
184-Pin Unbuffered Double Data Rate SDRAM
|
Qimonda
|
| HYS72D32300GU-5-C HYS64D16301GU-6-C HYS72D32300HU- |
RES 160 OHM 1/16W 5% 0402 SMD
184-Pin Unbuffered Double Data Rate SDRAM 184引脚缓冲双数据速率SDRAM
|
Infineon Technologies AG
|
| HYS64D32301HU-5-B HYS64D64300GU-5-B HYS72D64300GU- |
42184-Pin Unbuffered Double-Data-Rate Memory Modules
|
Qimonda AG
|
| HYMD525G726CFP4-D43 HYMD525G726CFP4-J HYMD512G726C |
64M X 8 DDR DRAM MODULE, 0.7 ns, DMA184 ROHS COMPLIANT, DIMM-184
184pin Registered DDR SDRAM DIMMs
|
Hynix Semiconductor, Inc.
http://
|
| 3TB41-15 |
TB Series Basic Switch, Double Pole Double Throw Double Break Circuitry, 10 A at 250 Vac, Pin Plunger Actuator, Silver Contacts, Screw Termination
|
Honeywell
|
| M13L2561616A-2A |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| M13S128324A-2M |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| M13S2561616A-2S |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
