| PART |
Description |
Maker |
| IRF634B IRFS634B IRF634BFP001 |
250V N-Channel B-FET / Substitute of IRF634 & IRF634A
250V N-Channel MOSFET
|
Samsung semiconductor
FAIRCHILD[Fairchild Semiconductor]
|
| IRF644B IRFS644B IRF644 IRF644BFP001 |
250V N-Channel MOSFET
250V N-Channel B-FET / Substitute of IRF644 & IRF644A
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFP244B IRFP244BFP001 |
250V N-Channel B-FET / Substitute of IRFP244 & IRFP244A
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFS244B IRFS244BFP001 |
250V N-Channel B-FET / Substitute of IRFS244 & IRFP244A
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF9N25C FQP9N25C FQP9N25CTSTU |
250V N-Channel MOSFET 8.8 A, 250 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
250V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQI27N25 FQB27N25 FQB27N25TMAM002 FQB27N25TMNAM002 |
250V N-Channel MOSFET(漏源电压250VN沟道增强型MOS场效应管) 25.5 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
250V N-Channel MOSFET(漏源电压50V的N沟道增强型MOS场效应管)
250V N-Channel QFET
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FQD4N25 FQU4N25 FQD4N25TM FQD4N25TF |
250V N-Channel MOSFET(婕???靛?涓?50V????垫?涓?.0A??娌??澧?己??OS?烘?搴??)
250V N-Channel QFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| FQI16N25 FQB16N25 FQB16N25TM |
250V N-Channel MOSFET
250V N-Channel QFET
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| IRFP264 IRFP264PBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=250V, Rds(on)=0.075ohm, Id=38A) 功率MOSFET（减振钢板基本\u003d 250V，的Rdson）\u003d 0.075ohm，身份证\u003d 38A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| FQG4902 FQG4902TU |
250V Dual N & P-Channel QFET
250V Dual N & P-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFI644G IRFI644 IRFI644GPBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=250V Rds(on)=0.28ohm Id=7.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=250V/ Rds(on)=0.28ohm/ Id=7.9A)
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A) 功率MOSFET（减振钢板基本\u003d 250V，的Rds（on）\u003d 0.28ohm，身份证\u003d 7.9A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
