PART |
Description |
Maker |
IRFW520A IRFI520A IRFWI520A IRFW520ATM |
Advanced Power MOSFET N-CHANNEL POWER MOSFET 100V N-Channel A-FET Advanced Power MOSFET 9.2 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
IRF1404SPBF IRF1404LPBF IRF1404STRLPBF IRF1404SPBF |
HEXFET垄莽 Power MOSFET HEXFET? Power MOSFET 75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA Advanced Process Technology
|
International Rectifier
|
IRF1010NLPBF IRF1010NSPBF IRF1010NSTRRPBF IRF1010N |
HEXFET? Power MOSFET HEXFET㈢ Power MOSFET Advanced Process Technology
|
International Rectifier
|
IRFI1010NPBF IRFI1010NPBF-15 |
ADVANCED PROCESS TECHNOLOGY HEXFET㈢ Power MOSFET HEXFET? Power MOSFET
|
International Rectifier
|
IRFI1310NPBF IRFI1310NPBF-15 |
ADVANCED PROCESS TECHNOLOGY HEXFET㈢ Power MOSFET HEXFET? Power MOSFET
|
International Rectifier
|
IRFRU220A IRFR_U220A IRFR220A IRFU220A IRFR/U220A |
4.6 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET ADVANCED POWER MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
IRFS150A |
TRANSISTOR|MOSFET|N-CHANNEL|100VV(BR)DSS|31AI(D)|TO-247VAR
Advanced Power MOSFET
|
Fairchild Semiconductor
|
IRF610A |
Advanced Power MOSFET N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为200V,导通电阻为1.5Ω,漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
IRFS840A |
N-Channel Power MOSFET00V.85Ω.6AN沟道功率MOS场效应管(漏源电00V,导通电.85Ω,漏电流4.6A 4.6 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET Advanced Power MOSFET
|
Fairchild Semiconductor, Corp.
|
IRFS530 IRFS530A IRFS530ANL |
N-CHANNEL POWER MOSFET Advanced Power MOSFET 100V N-Channel A-FET / Substitute of IRFS530
|
FAIRCHILD[Fairchild Semiconductor]
|