| PART |
Description |
Maker |
| IRLML5103TRPBF |
Generation V Technology
|
TY Semiconductor Co., L...
|
| IRF7314PBF IRF7314TRPBF IRF7314PBF-15 |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
| IRLMS6702 IRLMS6702TR |
Generation V Technology
HEXFET Power MOSFET
|
International Rectifier
|
| IRF7413GTRPBF IRF7413GPBF |
Generation V Technology
Ultra Low On-Resistance
|
International Rectifier
|
| IRF7343PBF IRF7343TRPBF |
generation v technology
HEXFET Power MOSFET
|
International Rectifier
|
| IRLML2803GPBF11 |
Generation V Technology, Ultra Low On-Resistance, N-Channel MOSFET
|
International Rectifier
|
| KRF7313 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
| SGP10N60A SGW10N60A SGP10N60A09 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW15N60 SGP15N60 SGP15N6008 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| IRF7306 IRF7306TR IRF7306TRPBF |
Generation V Technology
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| SKB06N60HS SKB06N60HS07 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
