| PART |
Description |
Maker |
| IXGT60N60 IXGH60N60 IXGK60N60 |
Ultra-Low VCE(sat) IGBT
IGBT Discretes: Low Saturation Voltage Types Single IGBT
|
http://
IXYS[IXYS Corporation]
|
| PBSS301PD |
4A PNP low VCEsat (BISS) transistor PNP low VCEsat Breakthrough
|
NXP
|
| PBSS3540M PBSS3540M315 |
40 V, 0.5 A PNP low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
40 V. 0.5 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
Philips
|
| PBSS5160DS PBSS5160DS115 PBSS5160DS-15 |
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
60 V, 1 A PNP low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| IXSM45N100 IXSH45N100 |
1000V IGBT with diode
IGBT Discretes: Low Saturation Voltage Types
Low VCE(sat) IGBT - Short Circuit SOA Capability
|
IXYS[IXYS Corporation]
|
| STGWA45HF60WDI STGW45HF60WDI |
45 A, 600 V ultra fast IGBT with low drop diode
|
http://
STMicroelectronics
|
| BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Q67078-A4402-A2 BUP203 BUP203SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) 21 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| GA75TS120U GA75TS120UPBF |
Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT
|
IRF[International Rectifier]
|
| GA2.0TS60U |
HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT
|
International Rectifier
|
| SGS13N60UFD SGS13N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
