| PART |
Description |
Maker |
| HYMD116M725BL8-H HYMD116M725BL8-J HYMD116M725BL8-K |
Unbuffered DDR SDRAM SO-DIMM
16Mx72|2.5V|J/M/K/H/L|x9|DDR SDRAM - SO DIMM 128MB 16Mx72 | 2.5V的|焦九龙/升| X9热卖| DDR SDRAM内存- 128MB的内存苏
|
Hynix Semiconductor
http://
Atmel, Corp.
|
| HYS64D16000GU-7-A HYS64D16000GU-8-A HYS72D32020GU- |
DDR SDRAM Modules - 128MB (16Mx72) PC2100 1-bank
Unbuffered DDR SDRAM-Modules
|
INFINEON[Infineon Technologies AG]
|
| HY5DU28822BT-X HY5DU28822BT HY5DU28822BLT-X HY5DU2 |
DDR SDRAM - 128Mb
128M-S DDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
| K4S281632K-UC_L50 K4S281632K-UC_L60 K4S280832K-UC_ |
128Mb K-die SDRAM Specification
|
Samsung semiconductor
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY5DU281622DLT HY5DU281622DLT-X HY5DU281622DT HY5D |
DDR SDRAM - 128Mb
128MB-S DDR SDRAM
|
Hynix Semiconductor
|
| H5DU1262GTR-FB H5DU1262GTR-E3 H5DU1262GTR-E4 H5DU1 |
128Mb DDR SDRAM
|
Hynix Semiconductor
|
| K4H561638N-LCB3T00 K4H560838N-LLB30 |
N-die DDR SDRAM
32M X 8 DDR DRAM, 0.7 ns, PDSO66
|
Samsung semiconductor
|
| EBD12UB8ALF-75 EBD12UB8ALF-7A EBD12UB8ALF-1A |
128MB Unbuffered DDR SDRAM DIMM
|
Elpida Memory
|
| EBD12RB8ALFA-1A EBD12RB8ALFA-75 EBD12RB8ALFA-7A EB |
128MB Registered DDR SDRAM DIMM
|
Elpida Memory
|
