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K4N51163QC-ZC36 - 512Mbit gDDR2 SDRAM

K4N51163QC-ZC36_1259091.PDF Datasheet
 Full text search : 512Mbit gDDR2 SDRAM
 Product Description search : 512Mbit gDDR2 SDRAM

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K4N51163QC-ZC25 K4N51163QC-ZC36 K4N51163QC-ZC33 K4 ; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes 512MB的GDDR2 SDRAM
512Mbit gDDR2 SDRAM
 http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
K4J52324QC K4J52324QC-BJ14 K4J52324QC-BC14 K4J5232 512Mbit GDDR3 SDRAM
 SAMSUNG[Samsung semiconductor]
HYB25D512800AT-6 HYB25D512160AT-6 HYB25D512160AT H 512Mbit Double Data Rate SDRAM
 INFINEON[Infineon Technologies AG]
K4S511632D K4S511632D-KC K4S511632D-KC_L1H K4S5116 32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL 12兆内00万16 × 4银行同步DRAM LVTTL
 Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
HY27USXXX HY27SS16121M HY27SSXXX HY27US08121M HY27 (HY27SSxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512兆（64Mx8bit / 32Mx16bit）NAND闪存
 Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
H55S5132EFR H55S5132EFR-75M 512Mbit (16Mx32bit) Mobile SDR Memory
 Hynix Semiconductor
HY27US08121M HY27US16121M HY27USXXX HY27SS08121M H 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
 HYNIX[Hynix Semiconductor]
HYB25D512400BC-5 HYB25D512160BC-5 HYB25D512400BT-6 512Mbit Double Data Rate (DDR) Components
 Infineon
HY5S7B6LF-H HY5S7B6LF-S HY5S7B6LFP-H HY5S7B6LFP-S 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
 Hynix Semiconductor
W982516BH-75 W982516BH-75I W982516BH-75L Industrial SDRAM
Low Power SDRAM
4M X 4 BANKS X 16 BIT SDRAM
 Winbond Electronics
HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- 3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块)
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块)
3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块)
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块（3.3 256M位内存模块）
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 SIEMENS AG
 
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