| PART |
Description |
Maker |
| M372F32080DJ4-CEDOMODE |
32M x 72 DRAM DIMM with ECC Using 16M x 4, 4K & 8K Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
| KMM372C1600BK KMM372C1600BS KMM372C1680BK KMM372C1 |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
|
Samsung Electronic
Samsung semiconductor
|
| HYMD232646DP8-H HYMD232726DP8-H HYMD264726DP8-H HY |
1184pin Unbuffered DDR SDRAM DIMMs
32M X 8 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
32M X 8 DDR DRAM MODULE, 0.7 ns, DMA184 ROHS COMPLIANT, DIMM-184
16M X 16 DDR DRAM MODULE, 0.7 ns, DMA184
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| AMP374P6453BT1-C1H AMP374P6453BT1-C1HS AMP374P6453 |
64M X 72 SDRAM DIMM with ECC based on 32M X 8, 4 Banks, 8K REFRESH, 3.3V Synchronous DRAMs
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
| KMM372C803CK KMM372C803CS KMM372C883CK KMM372C883C |
8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 5V
|
Samsung Electronic
Samsung semiconductor
|
| M374F08083DJ3-CEDOMODE |
8M x 72 DRAM DIMM with ECC Using 8M x 8, 8K & 4K Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
| HYMD232726A8J-J HYMD232726A8J-D43 HYMD232726A8J-D4 |
32M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
DDR SDRAM - Unbuffered DIMM 256MB
|
Hynix Semiconductor, Inc.
|
| HSD128M72B9K HSD128M72B9K-10 HSD128M72B9K-10L HSD1 |
Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,
|
Hanbit Electronics Co.,Ltd
http://
|
| HCPMEM-512 |
EDO DRAM Board 512Mbyte ( 32M x 144-Bit ) organized as 4Banks of 8Mx144, 4K Ref., 3.3V, ECC EDO公司的DRAM局512Mbyte2M的144位）筹办8Mx144K的参Banks。，3.3伏，环境保护运动委员
|
Hanbit Electronics Co.,Ltd.
|
| HSD32M72D18R-10 HSD32M72D18R-10L HSD32M72D18R-12N |
Synchronous DRAM Module 256Mbyte (32Mx72bit), DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
