| PART |
Description |
Maker |
| M57903L |
Hybrid IC Base Drive Module 2 Amperes/10 Volts
|
Powerex Power Semiconductors
|
| MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
| MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
|
Toshiba Semiconductor
Toshiba Corporation
|
| EPG4012J |
1000Base-T Module
DATACOM TRANSFORMER FOR 10/100 BASE-TX; 1000 BASE-T APPLICATION(S)
|
PCA ELECTRONICS INC.
|
| 2SC982TM03 2SC982TM |
Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) Printer Drive, Core Drive and LED Drive Applications Low Frequency Amplifier Applications
|
Toshiba Semiconductor
|
| HCPL-530K-300 5962-96852 5962-9685201HPA 5962-9685 |
5962-9685201HXA · Intelligent Power Module and Gate Drive Interface, Hermetically Sealed Optocoupler
5962-9685201HPC · Intelligent Power Module and Gate Drive Interface, Hermetically Sealed Optocoupler
5962-9685201KPC · Intelligent Power Module and Gate Drive Interface, Hermetically Sealed Optocoupler
5962-9685201HYC · Intelligent Power Module and Gate Drive Interface, Hermetically Sealed Optocoupler
5962-9685201KPA · Intelligent Power Module and Gate Drive Interface, Hermetically Sealed Optocoupler
5962-9685201HYA · Intelligent Power Module and Gate Drive Interface, Hermetically Sealed Optocoupler
5962-9685201HPA · Intelligent Power Module and Gate Drive Interface, Hermetically Sealed Optocoupler
Intelligent Power Module and Gate Drive Interface Hermetically Sealed Optocouplers
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| 2SB907 E000655 |
TRANSISTOR (SWITCHING, HANNER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| IL5 IL1-X001 IL1-X016 IL2-X009 IL2-X016 IL2-X009T |
Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP
IL1, IL2, IL5 - Optocoupler, Phototransistor Output, with Base Connection
|
Vishay Semiconductors
|
| 2SK2986 |
Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Relay Drive, Motor Drive and DC .DC Converter Application
|
TOSHIBA
|
| 2SK2967 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) DC .DC Converter, Relay Drive and Motor Drive Applications
|
TOSHIBA
|
