| PART |
Description |
Maker |
| 1SS193 E000243 |
From old datasheet system
ULTRA HIGH SWITCHING APPLICATION
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| GBAV151 |
The GBAV151 is designed for ultra high speed switching application
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| KTK5131S |
SMOS FET/ Analog Switch Application
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 1SS226 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS30207 1SS302-07 |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 1SS301 |
ULTRA HIGH SPEED SWITCHING APPLICATIONS
|
Guangdong Kexin Industrial ...
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS226T5LFT 1SS226TE85L |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| HN4D01JU-14 |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 1SS38207 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS30007 1SS300 |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 1SS362 |
Ultra high speed switching application
|
TY Semiconductor Co., L...
|
