| PART |
Description |
Maker |
| NBB-X-K1 NLB-310 NLB-3101 NLB-310- |
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz
|
RF Micro Devices
|
| RFVC1801 RFVC1801S2 RFVC1801PCK-410 |
WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 5GHZ TO 10GHZ
|
http://
RF Micro Devices
|
| NEZ6472-15B NEZ5258-4BD NEZ4450-8BD NEZ4450-8B NEZ |
C-BAND POWER GAAS MESFET C波段功率GaAs MESFET
CAP 100UF 6V 20% TANT SMD-6032-28 TR-7
|
NEC, Corp.
NEC Corp.
NEC[NEC]
http://
|
| LMA183 |
2-18 GHz MESFET Amplifier
|
Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
|
| CFY25-P CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23 |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Low Noise / General Purpose MESFET 伊雷尔X波段功率低噪通用场效应晶体管
|
TRIQUINT SEMICONDUCTOR INC
INFINEON[Infineon Technologies AG]
|
| RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system
5.1-5.9 GHz U-NII Power Amplifier
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| NLB-310_06 NBB-X-K1 NLB-310 NLB-310-E NLB-310-T1 N |
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 6GHz
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz
|
http://
RF Micro Devices, Inc.
RFMD[RF Micro Devices]
|
| ISL3090 |
10GHz Vco
|
Intersil Corporation
|
| ZL40812 |
10GHz Fixed Modulus ÷ 16
From old datasheet system
|
Zarlink
|
| MCH4015 |
RF Transistor, 12V, 100mA, fT=10GHz, NPN Single MCPH4
|
ON Semiconductor
|
| NE25139U74 NE25139U73 NE25139U72 NE25139U71 NE2513 |
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,30MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,20MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,10MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,5MA I(DSS),SOT-143
From old datasheet system
|
NEC Electron Devices
|
