| PART |
Description |
Maker |
| MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT
Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| LPV1500 |
PACKAGED LOW NOISE PHEMT
1 W Power PHEMT
|
Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| 0603CS-30NXJLW GJM1555C1HR80BB01D GRM188R71H104KA9 |
Enhancement Mode pHEMT Technology (E-pHEMT)
|
Freescale Semiconductor, Inc
|
| AS166-300 |
PHEMT GaAs IC High Power SP4T Switch 0.1-2.5 GHz PHEMT的砷化镓集成电路大功率SP4T开0.1-2.5千兆
PHEMT GaAs IC High Power SP4T Switch 0.1.5 GHz
|
Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| FPD750-000 FPD750-000S3 FPD750-000SQ |
0.5W POWER pHEMT
|
RF Micro Devices
|
| FPD3000 FPD3000-000 FPD3000-000S3 FPD3000-000SQ |
2W POWER pHEMT
|
RF Micro Devices
|
| FPD2000V |
2W POWER PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| FPD1050-000 FPD1050-000S3 FPD1050-000SQ |
0.75W POWER pHEMT
|
RF Micro Devices
|
| FPD10000V |
10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS
|
FILTRONIC[Filtronic Compound Semiconductors]
|
