| PART |
Description |
Maker |
| LTST-C230KSKT |
Compatible with Infrared and Vapor phase reflow solder process
|
光宝科技股份有限公司
LITEON[Lite-On Technology Corporation]
|
| LTST-C191GKT |
Super thin (0.55H mm) Chip LED, Compatible with infrared and vapr phase reflow solder process
|
光宝科技股份有限公司
Lite-On Technology Corporation
|
| 1600 1600-9A 1045 1045-9A 1088 1150 1088-9A 1089 1 |
T-1 Lamps, Visible-Infrared
T-1 Lamps, Visible-Infrared 的T 1灯，可见光，红外
TV 22C 22#22D PIN RECP 的T 1灯，可见光，红外
Shielded Paired Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyethylene; Number of Pairs:5; Leaded Process Compatible:Yes; Drop Ship:Yes RoHS Compliant: Yes 的T 1灯，可见光，红外
Coaxial Cable; Coaxial RG/U Type:174; Impedance:50ohm; Conductor Size AWG:26; No. Strands x Strand Size:7 x 34; Jacket Material:Polyvinylchloride (PVC); Jacket Color:Black; Leaded Process Compatible:Yes; Voltage Nom.:1400V RoHS Compliant: Yes
of Pairs:5; Drop Ship:Yes; Features:Alumunium Foil Polyester/Tinned Copper Braid RoHS Compliant: Yes
IGBT MODULE, 1200V, 167A; Transistor type:3-phase bridge invertor; Current, Ic continuous a max:169A; Voltage, Vce sat max:2.05V; Case style:miniSKiiP-3; Current, Ic continuous b max:137A; Temperature, current:25(degree C); Time, RoHS Compliant: Yes
T-1 Lamps/ Visible-Infrared
|
International Light Technologies, Inc.
International Light Technologies Inc.
Gilway Technical Lamp
|
| AA3528AF3C |
2.4 mm, 1 ELEMENT, INFRARED LED, 940 nm
3.5x2.8 mm INFRARED EMITTING DIODE
|
Kingbright Corporation
|
| F5D3 F5D1 F5D2 |
AIGAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
QT[QT Optoelectronics]
|
| OP290 OP290A OP290B OP290C OP291A OP291B OP291C OP |
4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
Plastic Infrared Emitting Diode
|
OPTEK TECHNOLOGY INC
OPTEK Technologies
|
| LN59L |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
|
| LN59-LNA2702L LNA2702L LN59 |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
Panasonic Corporation
Panasonic Semiconductor
|
| OP165D |
GaAs Plastic Infrared Emitting Diode(砷化镓塑料红外发光二极管,可替代K6500\OP163系列器件) 3 mm, 1 ELEMENT, INFRARED LED, 935 nm
|
Optek Technology
|
| ASDL-4770-C22 ASDL-4770-C41 |
1 ELEMENT, INFRARED LED, 940 nm
High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
AVAGO TECHNOLOGIES LIMITED
http://
|
| TLN233 |
TOSHIBA Infrared LED GaALAs Infrared Emitter
|
TOREX SEMICONDUCTOR LTD.
Toshiba Semiconductor
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
