PART |
Description |
Maker |
M36P0R9070E0_06 M36P0R9070E0 M36P0R9070E0ZAC M36P0 |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
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M36WT8B10ZA6T M36WT8B70ZA6T M36WT864T70ZA6T M36WT8 |
HEATSHRINK BLACK 4IN X 50FT 64兆位4Mb的x16插槽,多银行,突发闪存和8兆位的SRAM12k x16,内存产品多 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product 64兆位4Mb的x16插槽,多银行,突发闪存和8兆位的SRAM12k x16,内存产品多
|
STMicroelectronics N.V. 意法半导
|
M39P0R1080E4ZASE M39P0R1080E4ZASF M39P0R9080E4 M39 |
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package 512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
M36DR432-ZAT M36DR432A100ZA6T M36DR432A100ZA6C M36 |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽,双行,页闪存和4兆位256K x16的SRAM,多个存储产
|
意法半导 STMicroelectronics N.V.
|
M58WR064HB M58WR064HT M58WR064HT60ZB6E M58WR064HT6 |
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories
|
Numonyx B.V
|
M36L0T7050B2 M36L0T7050B2ZAQ M36L0T7050B2ZAQE M36L |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
|
Numonyx B.V
|
M36P0R8070E0 M36P0R8070E0ZACE M36P0R8070E0ZACF |
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
M58PR001LE M58PR001LE96ZAC5 M58PR001LE96ZAD5 M58PR |
512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
M29DW641F90ZE6E M29DW641F90ZE6F M29DW641F90ZE6T |
64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
|
Numonyx B.V
|
M58LR128F-ZB M58LR128F-ZBE M58LR128F-ZBF M58LR128F |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
STMicroelectronics
|