PART |
Description |
Maker |
MAPM-020512-010C00 |
Broadband UHF/VHF Power Module 20 - 512 MHz, 10W
|
M/A-COM Technology Solutions, Inc.
|
PTB20206 |
1.0 Watt, 470-860 MHz RF Power Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
MRF374A |
MRF374A 470-860 MHz, 130 W, 32 V Lateral N-Channel Broadband RF Power MOSFET RF POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc Motorola Inc
|
PTB20101 |
175 Watts P-Sync, 470-860 MHz UHF TV Power Transistor
|
ERICSSON[Ericsson]
|
MRF373D |
MRF373R1, MRF373SR1 470-860 MHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET
|
Motorola
|
PTB20031 |
40 Watts, 42070 MHz RF Power Transistor 40 Watts, 420-470 MHz RF Power Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
PTB20030 |
15 Watts, 42070 MHz RF Power Transistor 15 Watts, 420-470 MHz RF Power Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
HB52F649E1 HB52F649E1-75B |
512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC133SDRAM 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM 512 MB Registered SDRAM DIMM 64-Mword 72-bit/ 133 MHz Memory Bus/ 1-Bank Module (18 pcs of 64 M 4 Components) PC133SDRAM 512 MB Registered SDRAM DIMM 64-Mword 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 4 Components) PC133SDRAM
|
Elpida Memory, Inc.
|
MC68HC711E20VFS2 MC68HC711E9VFS2 MC68HC711E9VFN2 M |
Microcontroller, 2 MHz, RAM=768, ROM=0, EPROM=20K, EEPROM=512 Microcontroller, 2 MHz, RAM=512, ROM=0, EPROM=12K, EEPROM=512 Microcontroller, 3 MHz, RAM=512, ROM=0, EPROM=12K, EEPROM=512
|
Motorola
|
HB52R649E1U-B6B HB52R649E1U-A6B |
512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM
|
Elpida Memory
|
KP13F-403C KP10F-403B |
403 MHz - 470 MHz PARABOLIC ANTENNA, 22 dBi GAIN, 13 deg 3dB BEAMWIDTH 403 MHz - 470 MHz PARABOLIC ANTENNA, 19.6 dBi GAIN, 14 deg 3dB BEAMWIDTH
|
ANDREW CORP
|
PTVA043502FC |
Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 ?860 MHz
|
Infineon Technologies A...
|