PART |
Description |
Maker |
TDA8928J TDA8928ST |
Power stage 2 x 10 or 1 x 20 W class-D audio amplifie
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NXP Semiconductors
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HMC478SC70 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 4 GHz
|
Hittite Microwave Corporation
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IXFN100N10S1 IXFN100N10S3 IXFN100N10S2 |
HiPerFET Power MOSFETs with Schottky Diodes 100 A, 100 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system
|
IXYS, Corp. IXYS[IXYS Corporation]
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APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp. Advanced Power Technology
|
SPP47N10L |
100-V MOS transistors in S-FET technology( 采用S-FET 技术制作的 100-V MOS 型晶体管) 47 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
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APT20M22LVR APT20M22LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
APT10M11JVFR |
Power FREDFET; Package: ISOTOP®; ID (A): 144; RDS(on) (Ohms): 0.011; BVDSS (V): 100; 144 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
NMA5107-A1M |
High Power Broadband Noise Sources 100 Hz to 100 MHz
|
Micronetics, Inc.
|
IPB05CN10NG |
100 A, 100 V, 0.0051 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
INFINEON TECHNOLOGIES AG
|
APT5010JVR |
POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
|
Advanced Power Technolo... Advanced Power Technology, Ltd.
|
MBR40H100WD MBR40H100WT MBR40H100WTG |
SWITCHMODE Power Rectifier 100 V, 40 A SWITCHMODE⑩ Power Rectifier 100 V, 40 A
|
ON Semiconductor
|
PWR220-2FB75R0F PWR220-2FB7500F PWR220-2FB1502F PW |
Power Resistors 75ohm 1% 2Pin Thru Hole RESISTOR, METAL GLAZE/THICK FILM, 1.5 W, 1 %, 100 ppm, 75 ohm, THROUGH HOLE MOUNT Power Resistors 750ohm 1% 2Pin Thru Hole RESISTOR, METAL GLAZE/THICK FILM, 1.5 W, 1 %, 100 ppm, 750 ohm, THROUGH HOLE MOUNT Power Resistors 15K 1% 2Pin ThruHole Thru Hole RESISTOR, METAL GLAZE/THICK FILM, 1.5 W, 1 %, 100 ppm, 15000 ohm, THROUGH HOLE MOUNT RESISTOR, FIXED, POWER RESISTOR, METAL GLAZE/THICK FILM, 1.5 W, 5 %, 100 ppm, 330 ohm, THROUGH HOLE MOUNT RESISTOR, FIXED, POWER RESISTOR, METAL GLAZE/THICK FILM, 1.5 W, 5 %, 100 ppm, 300 ohm, THROUGH HOLE MOUNT RESISTOR, FIXED, POWER RESISTOR, METAL GLAZE/THICK FILM, 1.5 W, 5 %, 100 ppm, 1 ohm, THROUGH HOLE MOUNT Power Resistors 1.5K 1% 2Pin RESISTOR, METAL GLAZE/THICK FILM, 1.5 W, 1 %, 100 ppm, 1500 ohm, THROUGH HOLE MOUNT Power Resistors 2K 1% 2Pin Thru Hole RESISTOR, METAL GLAZE/THICK FILM, 1.5 W, 1 %, 100 ppm, 2000 ohm, THROUGH HOLE MOUNT
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Bourns, Inc.
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