| PART |
Description |
Maker |
| BFR380L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for high IIP3 LNA and Low Phase Noise Oscillators
|
INFINEON[Infineon Technologies AG]
|
| MA4VAT2004-1061T |
High IIP3 PIN Diode Variable Attenuator 1.70-2.00 GHz
|
MACOM[Tyco Electronics]
|
| MA4VAT904-1061T MA4VAT904-1061T-15 |
High IIP3 PIN Diode Variable Attenuator 0.8 - 1.0 GHz
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| SKY12232-21 |
High IIP3 2.65-3.65 GHz Voltage-Controlled Variable Attenuator
|
Skyworks Solutions Inc.
|
| BGU7008 |
SiGe:C Low Noise Amplifier MMIC
|
NXP Semiconductors
|
| BFP620 |
Low Noise SiGe:C Bipolar RF Transistor
|
Infineon Technologies A...
|
| UPC8230TU-E2-A UPC8230TU-13 |
SiGe:C LOW NOISE AMPLIFER FOR GPS
|
California Eastern Labs
|
| MSG33002 |
SIGE HBT TYPE FOR LOW-NOISE RF AMPLIFIER
|
PANASONIC[Panasonic Semiconductor]
|
| MSG33001 |
SiGe HBT type For low-noise RF amplifier
|
Panasonic Semiconductor
|
| MSG33002 |
SIGE HBT TYPE FOR LOW-NOISE RF AMPLIFIER
|
http://
|
| NESG240034-T1 |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
|
Renesas Electronics Corporation
|
| BFP750-15 |
High Linearity Low Noise SiGe:C NPN RF Transistor
|
Infineon Technologies A...
|
