| PART |
Description |
Maker |
| AGB3309 AGB3309S24Q1 AGB3309_REV_1.0 |
50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block
50 High Linearity Low Noise Internally Biased Wideband Gain Block
50蟹 High Linearity Low Noise Internally Biased Wideband Gain Block
50з High Linearity Low Noise Internally Biased Wideband Gain Block
From old datasheet system
|
ANADIGICS[ANADIGICS, Inc]
|
| AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Gain Block Amplifiers
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| MGA-633P8-BLKG MGA-633P8-TR1G |
Ultra Low Noise, High Linearity Active Bias Low Noise Amplifi er
|
AVAGO TECHNOLOGIES LIMITED
|
| MGA-683P8-BLKG MGA-683P8-TR1G |
Low Noise And High Linearity Active Bias Low Noise Amplifi er
|
AVAGO TECHNOLOGIES LIMITED
|
| AGB3312 AGB3312S24Q1 |
50 High Linearity Low Noise Internally Biased Wideband Gain Block
50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block
Gain Block Amplifiers
50з High Linearity Low Noise Internally Biased Wideband Gain Block
|
ANADIGICS[ANADIGICS, Inc]
|
| FPD3000SOT89 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| FPD750SOT343CE EB750SOT343-AH EB750SOT343-BA EB750 |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
Filtronic Compound Semiconductors
|
| FPD750SOT343 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
|
Filtronic Compound Semiconductors
|
| BFP450 |
High Linearity Low Noise Si NPN RF Transistor
|
Infineon Technologies AG
|
| FPD1050SOT89 FPD1050SOT89E |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
