| PART |
Description |
Maker |
| AM27C128 AM27C128-120 AM27C128-120DC AM27C128-120D |
112dB 192kHz 24-BIT SCH DAC
128 Kilobit (16 K x 8-Bit) CMOS EPROM
Octal D-Type Flip-Flops With Clear 20-PDIP 0 to 70
112dB 192kHz 24-BIT SCH DAC 16K X 8 UVPROM, 90 ns, CDIP28
112dB 192kHz 24-BIT SCH DAC 16K X 8 UVPROM, 120 ns, CDIP28
112dB 192kHz 24-BIT SCH DAC 16K X 8 UVPROM, 55 ns, CDIP28
112dB 192kHz 24-BIT SCH DAC 16K X 8 OTPROM, 90 ns, PDIP28
Quad 2-input exclusive-NOR gates with open collector outputs 14-SO 0 to 70 16K X 8 OTPROM, 120 ns, PDIP28
112dB 192kHz 24-BIT SCH DAC 16K X 8 OTPROM, 120 ns, PQCC32
112dB 192kHz 24-BIT SCH DAC 一一二分92kHz4位三星援
Quad /S-/R latches 16-SOIC 0 to 70 一一二分92kHz4位三星援
112dB 192kHz 24-BIT SCH DAC 16K X 8 UVPROM, 250 ns, CDIP28
Triple 3-input positive-NOR gates 14-SOIC 0 to 70
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| D555 ALD555 ALD555DA ALD555PA ALD555SA |
high speed cmos timer 高CMOS计时
112dB 192kHz 24-BIT SCH DAC
|
Advanced Linear Devices, Inc.
ALD[Advanced Linear Devices]
|
| AK4382 AK4382VT |
112dB 192kHz 24-BIT SCH DAC
|
Asahi Kasei Microsystem...
|
| SOM-6760FL-S1A1E |
Intel? Atom SCH US15W COM-Micro CPU Module
|
Advantech Co., Ltd.
|
| BUL62A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc.
STMicroelectronics
|
| BFN36 BFN38 Q62702-F1303 Q62702-F1246 |
From old datasheet system
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| APT5014BLL APT5014SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗，高电压，N沟道增强模式的新一代功率MOSFET
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS 7 500V 35A 0.140 Ohm
|
Advanced Power Technology, Ltd.
|
| M100K |
High Voltage Power Rectifiers / High Voltage Rectifier Diodes
|
Facon Semiconductor
|
| APT33GF120B2RD APT33GF120LRD |
Fast IGBT & FRED 1200V 52A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBTis a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
| 2SA1776 2SA1727 2SA1812 A5800343 2SA18121 |
High-voltage Switching Transistor (Telephone power supply)
High-voltage Switching Transistor (Telephone power supply) (-400V/ -0.5A)
High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A)
High-voltage Switching Transistor (Telephone power supply) (-400V -0.5A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
High-voltage Switching Transistor ( 400V, 0.5A)
|
ROHM[Rohm]
|
