| PART |
Description |
Maker |
| MPC2104P MPC2105P |
(MPC2104P / MPC2105P) 256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 256KB/512KB BurstRAM二级缓存模块为PowerPC制备/ CH旺平
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| MCM72CB32SG66 MCM72CB32SG100 MCM72CB64SG80 MCM72CB |
256KB and 512KB BurstRAM Secondary Cache Module for Pentium
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MCM72BA64SG66 MCM72BA32 MCM72BA32SG50 MCM72BA32SG6 |
256KB and 512KB BurstRAM Secondary Cache Module for Pentium
|
MOTOROLA[Motorola, Inc]
|
| MPC2004 MPC2005 |
256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 256KB12KB的二级缓存模块BurstRAM为PowerPC制备/ CH旺平
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MPC2105A MPC2106ASG66 MPC2105B |
(MPC2105x / MPC2106x) 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 128K X 72 CACHE TAG SRAM MODULE, 9 ns, DMA178
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 512KBMB的二级缓存模块BurstRAM为PowerPC制备/ CH旺平
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| MPC2105BSG66 MPC2105ASG66 MPC2105A MPC2106ASG66 MP |
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
|
Motorola, Inc
MOTOROLA[Motorola Inc]
|
| M28F420 |
4Mbit (512Kb x8 or 256Kb x16, Boot Block) Flash Memory(4Mb闪速存储器)
|
意法半导
|
| LXT971ABE M25P64-VME6P M25P64-VMF6P M27C400206 M27 |
Series One Watt Zeners
64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface
4 Mbit (256Kb x16) UV EPROM and OTP EPROM
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM
64 Mbit (4Mbx16, Boot Block) 3V Supply Flash memory
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs
Serial access Real-Time Clock with alarm
|
1N4728A
STMICROELECTRONICS[STMicroelectronics]
|
| CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| MCM67B618B MCM67B618BFN9 |
MCM67B618B 64K X 18 Bit BurstRAM Synchronous Fast Static RAM
64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write
From old datasheet system
|
Motorola, Inc
|
| GSM31P256KB-I66 GSM31P512KB-I66 |
x64 Interleaved Burst Mode SRAM Module
256KB Secondary Cache Module Designed For Use With Intel Pen-tium CPU based system(用于英特尔奔腾处理器系统56KB二级高速缓冲存储器)
512KB Secondary Cache Module Designed For Use With Intel Pen-tium CPU based system(用于英特尔奔腾处理器系统12KB二级高速缓冲存储器)
|
GSI Technology
|
