| PART |
Description |
Maker |
| 57.504.0055.0 |
Terminal Block; Wire Size (AWG):22-10; Mounting Type:DIN Rail; Color:Gray; Current Rating:35A; Terminal Block Clamp Type:Feed-Thru Terminals; Voltage Rating:600V RoHS Compliant: Yes 35 A, MODULAR TERMINAL BLOCK
|
Wieland Electric, Inc.
|
| APT6017B2FLL APT6017LFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 35A 0.017 Ohm
|
Advanced Power Technology, Ltd.
|
| R6035KNZC8 |
Nch 600V 35A Power MOSFET
|
ROHM
|
| RJK03M4DPA-00-J5A RJK03M4DPA-15 |
30V, 35A, 4.6mΩmax.N Channel Power MOS FET
30V, 35A, 4.6mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| STGW35NB60SD GW35NB60SD |
N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| PSB2196-NV1.4 PSB2196-HV1.4 |
ISAC-P TE (Subscriber Access Controll...
|
Infineon
|
| RJK0652DPB RJK0652DPB-00-J5 RJK0652DPB-13 |
60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| TPCS8205 TPC8205 |
Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
|
TOSHIBA[Toshiba Semiconductor]
|
| APT6030BN APT6033BN |
POWER MOS IV 600V 22.0A 0.33 Ohm / 600V 23.0A 0.30 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| RJK03E9DPA RJK03E9DPA-00-J5A |
30V, 35A, 4.3m max N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| DD350 DD356S DD350S DD351 DD351S DD352 DD352S DD35 |
35A GLASS PASSIVATED DISH TYPE PRESS-FIT DIODE
|
WTE[Won-Top Electronics]
|
