| PART |
Description |
Maker |
| MGFC42V5867 MGFC42V586712 |
5.8`6.75GHz BAND 16W INTERNALLY MATCHED GaAs FET
5.8~6.75GHZ BAND 16W INTERNALLHY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V7785A |
7.7- 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V374204 MGFC42V3742 |
3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V4450 |
4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| UPG2162T5N UPG2162T5N-E2-A |
DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN
|
California Eastern Labs
|
| FXP840070055B |
FXP.840 Freedom Series Super Small Monopole Dual-band 2.4 GHz /5 GHz Antenna
|
List of Unclassifed Manufacturers
|
| SST13LP01-QDF-K SST13LP01 SST13LP01-QDF |
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|
| TGA4501-EPU |
28-31 GHz Ka Band HPA 28000 MHz - 31000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
TriQuint Semiconductor,Inc.
TriQuint Semiconductor, Inc.
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| HMC398QS16G06 HMC398QS16G 398QS16GE |
8Ku-Band MMIC VCO with DIVIDE-BY-8, 14.0 - 15.0 GHz
8nullKu-Band MMIC VCO with DIVIDE-BY-8, 14.0 - 15.0 GHz
|
Hittite Microwave Corporation
|
| MAAMML0019 |
X -> Ka Band, Connectorised Tripler: 8 - 10 GHz -> 24 - 30 GHz
X -> Ka Band, Connectorised Tripler: 8 - 10 GHz -> 24 - 30 GHz
|
MACOM[Tyco Electronics]
|
