| PART |
Description |
Maker |
| ESLB-P245BA ESLB-P245BA-2 ESLB-P245BA-1 |
2.4-2.5GHz Band Chip Multilayer Band Pass Filter
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
| MGFK33V4045 K334045 |
14.0~14.5GHZ BAND 2W INTERNALLY MATCHED GAAS FET
From old datasheet system
14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V7785A_04 MGFC36V7785A |
7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785B |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC42V7785A |
7.7- 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V7785A_04 MGFC42V7785A MGFC42V7785A04 |
7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| B69842N5807A150 |
Microwave Ceramics and Modules 2 Pole Filter for W-LAN 5GHz /5.725-5.875 Band
|
EPCOS AG
EPCOS[EPCOS]
|
| SP8910 SP8910KGMP1T SP8910KG SP8910KGMP1S |
5GHZ ±10 Fixed Modulus Divider
5GHZ 10 Fixed Modulus Divider
5GHZ ÷10 Fixed Modulus Divider(5GHZ ÷10超高速低功耗固定模数除法器)
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:30A; On-Resistance, Rds(on):0.028ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No
|
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
| NJG1556KB2 |
1.5GHz/1.9GHz Mixer GaAs MMIC(用于1.5GHz/1.9GHz频带数字移动电话的砷化镓单片微波集成电路混频
|
New Japan Radio Co., Ltd.
|
| LT5572EUF LT5572 |
1.5GHz to 2.5GHz High Linearity Direct Quadrature Modulator
|
Linear Technology
|
| 55GN01CA 55GN01CA12 ENA1111A |
RF Transistor, 10V, 70mA, fT=5.5GHz, NPN Single CP
UHF Wide-band Low-noise Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| TQL5000 TQL500 |
LNA for 5GHz UNII Band 802.11a Systems
LNA for 5 GHz UNII Band 802.11a Systems
|
TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
|
