| PART |
Description |
Maker |
| MGFL45V1920A |
1.9 - 2.0 GHz BAND 32W Internally Matched GaAs FET
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC45V4450A_03 MGFC45V4450A MGFC45V4450A03 |
4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2123A |
2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET
2.1-2.3 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| SY55858U |
2.5V/3.3V 3.0GHZ DUAL 2 x 2 CML CROSSPOINT SWITCH W/INTERNAL TERMINATION
|
MICREL[Micrel Semiconductor]
|
| SY89875U_07 SY89875U SY89875UMG SY89875UMGTR SY898 |
2.5V, 2.0GHz ANY DIFF. IN-TO-LVDS PROGRAMMABLE CLOCK DIVIDER AND 1:2 FANOUT BUFFER W/ INTERNAL TERMINATION
|
MICREL[Micrel Semiconductor]
|
| MGFC45V5964A |
5.9-6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFS45V2527A |
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFL48L1920 |
1.9-2.0GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V3642A C453642A |
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET 3.6 - 4.2GHz波段32W内部匹配砷化镓场效应
From old datasheet system
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FSLC-C160W |
1.5-2.0GHz Band Chip Multilayer 90deg.3dB Splitter 1.5 - 2.0GHz的频段片式多0deg.3dB分配
|
Hitachi,Ltd.
|
| TDA2050-TB5-T TDA2050 TDA2050L-TB5-T |
32W HI-FI AUDIO POWER AMPLIFIER
|
Unisonic Technologies
|
| TDA2050 |
32W HI-FI AUDIO POWER AMPLIFIER
|
UTC
|
