| PART |
Description |
Maker |
| MGFS48B2122 |
2.11 - 2.17 GHz BAND 60W GaAs FET 21日至二月17号GHz频段60瓦砷化镓场效应管
|
NEC, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFS48V2527_04 MGFS48V2527 MGFS48V252704 |
2.5 - 2.7GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AA038P2-00 |
370 GHz GaAs MMIC Driver Amplifier
37-40 GHz GaAs MMIC Driver Amplifier
GT 4C 4#4 SKT PLUG
37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Alpha Industries Inc
ALPHA[Alpha Industries]
Alpha Industries, Inc.
|
| MGFS45V2123A |
2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET
2.1-2.3 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFK35V4045 |
14.0-14.5 GHz BAND 3W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| NE13700 NE13783S NE13783-4 |
80 GHz, 3 V, low noise Ku-band GaAs MESFET
|
NEC
|
| MGFC39V4450A |
4.4-5.0 GHz Band 8W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFK35V2228 |
12.2-12.8 GHz BAND 3W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MAAM02350 |
Wide Band GaAs MMIC Amplifier 0.2 - 3.0 GHz
|
M/A-COM Technology Solutions, Inc.
|
| MGFK38V2228 |
12.2-12.8 GHz BAND 6W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC47V5864 |
5.8 - 6.4 GHz BAND 50W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| XP1022-QF-0N00 XP1022-QF-EV1 |
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17000 MHz - 25000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17.0-25.0千兆赫的GaAs MMIC功率放大器，QFN封装
|
Mimix Broadband, Inc.
|
