| PART |
Description |
Maker |
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited.
Fujitsu, Ltd.
Fujitsu Limited
|
| 1SS269 |
Small packag Small Total capacitance: CT = 1.2pF(Max) Low series resistance: rs = 0.6(Typ.)
|
TY Semiconductor Co., Ltd
|
| TC1504N |
1W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1404N |
0.5W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1606N |
2W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| FLL21E004ME |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| AS218-321 AS218-321LF |
PHEMT GaAs IC High Power Transfer Switch DC?6 GHz
PHEMT GaAs IC High Power Transfer Switch DC-6 GHz
PHEMT GaAs IC High Power Transfer Switch DC6 GHz
|
Skyworks Solutions Inc.
ETC
|
| FLL1200IU- FLL1200IU-3 |
L-Band High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Eudyna Devices Inc
|
| FLL410IK-3C |
L-Band High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FLL410IK-4C |
L-Band High Power GaAs FET
|
Fujitsu Microelectronics
Eudyna Devices Inc
Fujitsu Media Devices Limited
Fujitsu Component Limited.
|
