| PART |
Description |
Maker |
| MIG400J101H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| BSM111AR C67076-S1013-A2 BSM111 |
SIMOPAC Module (Power module Single switch N channel Enhancement mode) 200 A, 100 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
SIMOPAC Module (Power module Single switch N channel Enhancement mode) SIMOPAC模块（单开关电源模块N通道增强模式
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| PM50502C |
SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING
|
Hitachi Semiconductor
|
| C67076-A1004-A2 BSM151 |
SIMOPAC Module (Power module Single switch N channel Enhancement mode) 48 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| PM4575J |
Silicon N-Channel Power MOS FET Module
|
Hitachi Semiconductor
|
| MIG300Q101H |
Intelligent Power Module Silicon N Channel IGBT 智能功率模块IGBT的硅频道
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| MIG300Q101H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MIG200J201H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MIG150Q101H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| HAT2058R-EL-E HAT2058RJ-EL-E HAT2058R05 |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| HAT2058R09 HAT2058R-EL-E |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, PLASTIC, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
