PART |
Description |
Maker |
MMDF4P03HD |
DUAL TMOS POWER MOSFET 30 VOLTS
|
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
|
MMDF3N03HD ON2180 |
From old datasheet system DUAL TMOS POWER MOSFET 4.1 AMPERES 30 VOLTS
|
MOTOROLA[Motorola, Inc]
|
MMDF3N02HD ON2178 |
From old datasheet system DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS
|
MOTOROLA[Motorola, Inc]
|
MMDF2P02E ON2168 |
DUAL TMOS MOSFET 2.5 AMPERES 25 VOLTS 2 A, 20 V, 0.4 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET From old datasheet system
|
Motorola Mobility Holdings, Inc. Motorola, Inc
|
MMDF2N02E MMDF2N02E_D ON2160 |
From old datasheet system Medium Power Surface Mount Products DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS
|
MOTOROLA[Motorola, Inc] ON Semi
|
MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM 3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc] Motorola, Inc. ON SEMICONDUCTOR
|
MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
MMDF2N06VL |
DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS
|
MOTOROLA[Motorola, Inc]
|
MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate From old datasheet system TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
|
ON Semiconductor Motorola, Inc
|
MTD20N06V MTD20N06 MTD20N06V_D ON2486 MTD20N06V-D |
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培RDS(on)\u003d 0.080欧姆 From old datasheet system TMOS V Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. Motorola, Inc ON Semiconductor
|
MTD3N25E MTD3N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|