| PART |
Description |
Maker |
| FX5545G005 |
Industry Smallest and Low Profile 5W 1.5A DC/DC Buck Converter with High Output Density Power
|
Vishay
|
| FX5545G006 |
Industry Smallest and Low Profile 7.5W 1.5A DC/DC Boost Converter with High Output Density Power
|
Vishay
|
| FX5545G106 |
Industry Smallest and Low Profile 10W 2A DC/DC Boost Converter with High Output Density Power
|
Vishay
|
| FX5545G201 |
Industry Smallest and Low Profile 3W 1000mA DC/DC Buck Converter with High Output Density Power
|
Vishay
|
| FX5545G1052V7T2 FX5545G105 FX5545G1052V7B1 FX5545G |
Industry Smallest and Low Profile 6.5W 2.0A DC/DC Buck Converter with High Output Power Density
From old datasheet system
|
VISAY[Vishay Siliconix]
|
| FX5545G001 FX5545G0011V5T1 FX5545G0011V5T2 FX5545G |
SMPS Controller 开关电源控制器
Industry Smallest and Lowest Profile Synchronous 1.5W 0.6A DC/DC Buck Converter with High Output Density Power
|
KEMET Corporation
Vishay
|
| LHUV-0380-0150 LHUV-0380-0200 LHUV-0380-0250 LHUV- |
Superior flux density, efficiency and design freedom ?in the industry’s only micro-package UV LED
|
Lumileds Lighting Compa...
|
| ISPLSI1024 ISPLSI1024EA-200LT100 1024EA ISPLSI1024 |
200 MHz in-system prommable high density PLD
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Jacket Material:Polyethylene; Number of Pairs:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
In-System Programmable High Density PLD
100 MHz in-system prommable high density PLD
|
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
http://
|
| 556 |
Industry Standard / High Perfomance Power Supplies
|
Total Power
|
| STP38N06 3645 |
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| ISPLSI1016EA ISPLSI1016EA-100LJ44 ISPLSI1016EA-100 |
125 MHz in-system prommable high density PLD
100 MHz in-system prommable high density PLD
In-System Programmable High Density PLD
200 MHz in-system prommable high density PLD
|
Lattice Semiconductor
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
