PART |
Description |
Maker |
NE5531079A-A NE5531079A-T1-A NE5531079A-T1A |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET LEAD FREE, 79A, 4 PIN 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
Duracell Renesas Electronics Corporation
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BLW32 |
UHF linear power transistor(UHF线性功率晶体管) UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
BLW898 |
UHF linear power transistor UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
BLV194 |
UHF power transistor UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
NXP Semiconductors N.V. Philips Semiconductors
|
MICRF002BM MICRF002 MICRF022BM MICRF022BN MICRF002 |
QwikRadiotm Low Power UHF Receiver Preliminary Information /022 QwikRadioTM Low Power UHF Receiver RES, 1.3K, 1/16W, TKF, 1%, 0603 RESISTOR,FIXED,FILM,CHIP,
|
MICREL[Micrel Semiconductor] Micrel Semiconductor,Inc.
|
MICRF104BM MICRF104 |
1.8V, QwikRadio UHF ASK Transmitter 1.8V, QwikRadioUHF ASK Transmitter 1.8V QwikRadio UHF ASK Transmitter 1.8V, QWIKRADIO⒙ UHF ASK TRANSMITTER 1.8V, QwikRadio⑩ UHF ASK Transmitter QwikRadioTM UHF ASK/PC Transmitter
|
Micrel Semiconductor,Inc. MICREL[Micrel Semiconductor]
|
UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
KDV154 KDV154A KDV154B |
TV VHF, UHF tuner AFC VCO for UHF band radio VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO)
|
Korea Electronics (KEC) KEC(Korea Electronics)
|
1507 1507-100A 1507-100B 1507-100C 1507-150A 1507- |
Delay 50 /-2.5 ns, 10-TAP SIP delay line Td/Tr=5 Delay 300 /-15 ns, 10-TAP SIP delay line Td/Tr=5 Delay 200 /-10 ns, 10-TAP SIP delay line Td/Tr=5 Delay 250 /-13 ns, 10-TAP SIP delay line Td/Tr=5 Delay 150 /-7.5 ns, 10-TAP SIP delay line Td/Tr=5 Delay 100 /-5 ns, 10-TAP SIP delay line Td/Tr=5 Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits 固定10抽头延迟线被动园 Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits Delay 40 /-2 ns, 10-TAP SIP delay line Td/Tr=5 Delay 500 /-25 ns, 10-TAP SIP delay line Td/Tr=5 Delay 20 /-2 ns, 10-TAP SIP delay line Td/Tr=5
|
Data Delay Devices Inc
|
0405SC-1000M MICROSEMIPOWERPRODUCTSGROUP-0405SC-10 |
SiC UHF: 400-450MHz, Class AB, Common Gate-Pulsed; P(out) (W): 1000; P(in) (W): 180; Gain (dB): 8; Vcc (V): 125; Pulse Width (µsec): 300; Duty Cycle (%): 10; Case Style: 55KT FET-1 UHF BAND, Si, N-CHANNEL, RF POWER, JFET 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT
|
Microsemi, Corp. Microsemi Corporation
|
MRF166C |
RF Power FET(射频功率场效应管) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Motorola Mobility Holdings, Inc.
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