| PART |
Description |
Maker |
| MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
(MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| SSM3J01T |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| ATC100B330JT500XT ATC200B203KT50XT CDR33BX104AKYS |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRF8P20160HR3 |
RF Power Field Effect Transistors
|
Motorola Semiconductor Products
|
| MRF19125 MRF19125R3 MRF19125SR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MRF6S21050LR3 MRF6S21050LSR3 |
RF Power Field Effect Transistors
|
Freescale (Motorola)
Freescale Semiconductor, Inc
|
| MRF8S7120NR3 |
RF Power Field Effect Transistor
|
Motorola
|
| MRF281 MRF281SR1 MRF281SR106 MRF281ZR1 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
