PART |
Description |
Maker |
MT49H8M36 MT49H16M18 MT49H32M9 |
288Mb CIO Reduced Latency
|
MICRON[Micron Technology]
|
MT49H32M9CFM-XX MT49H16M18C MT49H16M18CFM-XX MT49H |
288Mb SIO REDUCED LATENCY(RLDRAM II)
|
MICRON[Micron Technology]
|
MT49H16M16 MT49H16M16FM |
REDUCED LATENCY DRAM RLDRAM
|
Micron Technology
|
Z08470 Z08536 |
Customer Procurement Spec(CPS) Z-CIO and CIO Counter/Timer and Parallel I/O Unit
|
Zilog, Inc.
|
LTC2408 LTC2404 |
4-/8-Channel 24-Bit PowerNo Latency Delta-SigmaADC 4-/8-Channel 24-Bit µPowerNo Latency Delta-Sigma ADC 4-Ch, 4ppm INL, 1.5uV Noise, No Latency Delta Sigma 8-Ch, 4ppm INL, 1.5uV Noise, No Latency Delta Sigma
|
Linear Technology
|
SI4392DY SI4392DY06 |
N-Channel Reduced Qg, Fast Switching WFET? N-Channel Reduced Qg, Fast Switching WFET庐 N-Channel Reduced Qg, Fast Switching WFET㈢
|
Vishay Siliconix
|
LTC2410 LTC2410CGN 2410I LTC2410C LTC2410I LTC2410 |
From old datasheet system 24-Bit No Latency ADC with Differential Input and Differential Reference 24 Bit No Latency ADC
|
Linear Technology
|
K7K3236T2C K7K3218T2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
IS61DDB41M36-250M3 IS61DDB42M18-250M3 |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
|
Integrated Silicon Solution, Inc.
|
CAT93C46AJ CAT93C46AJI CAT93C46AJI-2.5 CAT93C46AJ- |
72-Mbit QDR-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 72-Mbit QDR-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 256K (32K x 8) Static RAM 256 Kb (256K x 1) Static RAM 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) Microwire Serial EEPROM 微型导线串行EEPROM
|
Atmel, Corp.
|
LTC2415-1 LTC2415 LTC2415IGN LTC2415CGN LTC2415-1C |
24-Bit No Latency ADCs with Differential Input and Differential Reference 24-Bit No Latency Delta Sigma ADC with Differential Input and Differential Reference 24-Bit No Latency Delta Sigma ADC with Differential Input, 50/60Hz Rejection
|
LINER[Linear Technology]
|