| PART |
Description |
Maker |
| 23L1610-12 |
3.3 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM
|
Macronix International Co., Ltd.
|
| AT49BV322A |
32 Mbit, 2.7 Volt Sectored Flash
|
Atmel
|
| AM42DL640AG25IT AM42DL640AG45IT AM42DL640AG70IT |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM 64兆位米8 4x 16位）.0伏的CMOS只，同时作业闪存6兆位米16位），静态存储器
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Advanced Micro Devices, Inc.
|
| V58C2128 V58C2128164S V58C2128404S V58C2128804S |
HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM
|
MOSEL[Mosel Vitelic, Corp]
|
| TE28F016C3B110 TE28F016C3B90 TE28F016C3T110 TE28F0 |
3 VOLT ADVANCED BOOT BLOCK 8- 16- 32-MBIT FLASH MEMORY FAMILY
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
|
INTEL[Intel Corporation]
|
| AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位）的CMOS电压1.8只。同时采取行动，页面模式闪存兆位12x 8-Bit/256x 16位），静态存储器（初步）
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
| EN29PL032A-70TIP |
32 Mbit (2 M x 16-Bit) CMOS 3.0 Volt- only, Simultaneous-Read/Write Flash Memory
|
Eon Silicon Solution Inc.
|
| S25FL127S |
128 Mbit (16 Mbyte) MirrorBit? Flash Non-Volatile Memory CMOS 3.0 Volt Core
|
SPANSION
|
| S25FL032P12 |
32-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus
|
SPANSION
|
| S25FL008K0XMFI011 S25FL008K0XMFI041 S25FL008K0XMFI |
8-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus
|
SPANSION
|
| S25FL032P |
32-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus
|
SPANSION
|
| S25FL064P |
64-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus
|
SPANSION
|
