| PART |
Description |
Maker |
| 29F016-90 |
16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
|
Macronix International Co., Ltd.
|
| MX29F016TI-90 MX29F016TI-12 29F016-12 29F016-90 |
16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
|
http://
Macronix International
|
| MX29LV640BUXBI-90G MX29LV640BUTI-12G MX29LV640BUTC |
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA63
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 120 ns, PDSO48
|
Macronix International Co., Ltd.
|
| MX29LV640BUXBI-90G MX29LV640BU MX29LV640BUTC-12 MX |
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| TC58FVB160-12 TC58FVB160-85 |
16M Bit (1M×16Bits ) CMOS NAND EEPROM(16M CMOS与非EEPROM) 1,600位（100万16位）的CMOS闪存EEPROM的（1,600 EEPROM中的CMOS与非
|
Toshiba Corporation
Toshiba, Corp.
|
| MBM29LV017-12 MBM29LV017-90 MBM29LV017-90PBT MBM29 |
FLASH MEMORY 16M (2M x 8) BIT
CMOS 16M (2M x 8) bit
|
Fujitsu Microelectronics
|
| 29LV040C-55R 29LV040C-90 29LV040C-70 |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY
|
Macronix International Co., Ltd.
|
| MX29LV040Q MX29LV040 MX29LV040TC-90 MX29LV040QC-70 |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
MXIC
|
| UPD4416004 UPD4416004G5-A17-9JF UPD4416004G5-A15-9 |
16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT
|
NEC Corp.
NEC[NEC]
|
| MX29LV040CTC-55R MX29LV040CTI-55R |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd.
|
| UPD4218160G5-60-7JF |
CMOS 16M-Bit DRAM
|
ETC
|
