PART |
Description |
Maker |
NE681M13-T3-A NE681M13 NE681M13-A |
NECs NP SILICON TRANSISTOR
|
CEL[California Eastern Labs]
|
NE851M33-T3-A |
NECs NPN SILICON TRANSISTOR 邻舍NPN硅晶体管 NECs NPN SILICON TRANSISTOR
|
Duracell California Eastern Laboratories, Inc. California Eastern Labs
|
NE851M33-T3-A NE851M33 NE851M33-A |
NECs NPN SILICON TRANSISTOR
|
California Eastern Labs
|
NE894M03 |
NECs NPN SILICON TRANSISTOR
|
California Eastern Labs
|
NE681M03-T1-A NE681M03-A |
NECs NPN SILICON TRANSISTOR
|
CEL[California Eastern Labs]
|
NESG2046M33-T3-A NESG2046M33 NESG2046M33-A |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION 邻舍npn型硅锗晶体管低噪声,高增益放 NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION
|
NEC, Corp. NEC Corp. NEC[NEC]
|
NESG2021M16-T3-A NESG2021M16 NESG2021M16-T3 |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CALMIRCO[California Micro Devices Corp]
|
NE5520379A-T1A-A NE5520379A |
NECS 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
|
California Eastern Labs
|
NESG210719 NESG210719-T1 |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
NEC[NEC]
|
NR8500 NR8500FR-BB-AZ NR8500FR-CB-AZ NR8500CP-BC-A |
CAP 1.0PF 25V .10 PF NP0(C0G) SMD-0603 TR-7 PLATED-NI/SN NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓APD的同轴包55字节/秒和622 Mb / s的应 NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓砷APD的同轴包55字节/秒和622 Mb / s的应 NECs φ50 μm InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
California Eastern Laboratories, Inc. California Eastern Labs
|