PART |
Description |
Maker |
RFP30P06 RF1S30P06SM RFG30P06 RF1S30P06 FN2437 |
30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs From old datasheet system 30A 60V 0.065 Ohm P-Channel Power MOSFETs 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P沟道增强型功率MOS场效应管) 30 A, 60 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
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INTERSIL[Intersil Corporation] Intersil, Corp.
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IRFR5305PBF IRFU5305PBF IRFR5305TRPBF IRFR5305TR I |
Ultra Low On-Resistance HEXFET㈢ Power MOSFET ( VDSS = -55V , RDS(on) = 0.065ヘ , ID = -31A ) HEXFET? Power MOSFET ( VDSS = -55V , RDS(on) = 0.065Ω , ID = -31A ) 31 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
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International Rectifier
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OM6215SS OM6214SS OM6216SS OM6217SS |
30 A, 100 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 100V Dual N-Channel MOSFET in a S-6 package 400V Dual N-Channel MOSFET in a S-6 package 500V Dual N-Channel MOSFET in a S-6 package 200V Dual N-Channel MOSFET in a S-6 package
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List of Unclassifed Manufacturers ETC International Rectifier
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STS3DNE60L 6083 |
N - CHANNEL 60V - 0.065ohm - 3A SO-8 STripFET POWER MOSFET From old datasheet system N - CHANNEL 60V - 0.065 - 3A SO-8 STripFET TM POWER MOSFET
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STMICROELECTRONICS[STMicroelectronics]
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JANTX2N6766 |
N Channel MOSFET; Package: TO-204AE; ID (A): 30; PD (W): 150; BVDSS (V): 200; Rq: 0.83; 30 A, 200 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
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Microsemi, Corp.
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2SC5809 |
Shrink Tubing; Tubing Size Diameter:0.75"; Wall Thickness Recovered Nominal:0.065"; Inner Diameter Max Recovered:0.313"; Expanded Inner Diameter:0.750"; Material:Polyolefin 3 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB Power Device - Power Transistors - Swicthing
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Panasonic, Corp.
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5033204160 SD-503320-001 SD-503320-002 |
0.25mm (.010) Pitch Easy-On Type FPC Connector, 1.65mm (.065) Mated Height, Right Angle, SMT
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Molex Electronics Ltd.
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VUM33-05N VUM33-05 IXYSCORP-VUM33-05N |
Power MOSFET Stage for Boost Converters 47 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system Power Factor Correction Modules: MOSFET
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IXYS, Corp. IXYS[IXYS Corporation]
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AUIRF1404Z AUIRF1404ZL AUIRF1404ZS |
HEXFET垄莽 Power MOSFET HEXFET? Power MOSFET 160 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA Low On-Resistance
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International Rectifier List of Unclassifed Man...
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IRF1404SPBF IRF1404LPBF IRF1404STRLPBF IRF1404SPBF |
HEXFET垄莽 Power MOSFET HEXFET? Power MOSFET 75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA Advanced Process Technology
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International Rectifier
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0879331007 87933-1007 |
1.27mm (.050) Pitch Wire-to-Board Header, Dual Row, SMT, Vertical, 10 Circuits, 0.05μm (2μ) Gold (Au) Plating, Mating Pin Length 1.65mm (0.065), with Cap 1.27mm (.050) Pitch Wire-to-Board Header, Dual Row, SMT, Vertical, 10 Circuits, 0.05渭m (2渭) Gold (Au) Plating, Mating Pin Length 1.65mm (0.065), with Cap
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http:// Molex Electronics Ltd.
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APT50M65JLL |
POWER MOS 7 500V 60A 0.065 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
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Advanced Power Technology Ltd.
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