| PART |
Description |
Maker |
| NX5323EH |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
NEC
|
| NX5315 NX5315EH-AZ NX5315EK-AZ |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS 邻舍1310纳米InGaAsP多量子阱FP激光二极管能为光纤到户无源光网络应用工具包
|
California Eastern Laboratories, Inc.
|
| NX6314EH |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
California Eastern Labs
|
| NX5521 NX5521EH |
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| FTM-9412P-F20 FTM-9412P-F20G FTM-9412P-F20I FTM-94 |
SFF GE-PON PX20 ONU Transceiver
|
Source Photonics, Inc.
|
| DS1865TTR |
PON Triplexer Control and Monitoring Circuit
|
MAXIM - Dallas Semiconductor
|
| DS1865T_TR DS1865 DS1865T_ |
PON Triplexer Control and Monitoring Circuit
|
MAXIM[Maxim Integrated Products]
|
| G8931-04-15 |
Time response characteristics compatible with SONET and G/GE-PON
|
Hamamatsu Corporation
|
| VSC7716 |
1.25 Gbps Burst Mode Transimpedance Amplifier for GE-PON (EPON) Systems
|
Vitesse Semiconductor Corporation
|
| C380SX500 C380AX500 C380BX500 C380CX500 C380DX500 |
Phase Control SCR 310 Amperes Avg 800 Volts
Phase Control SCR 310 Amperes Avg 1600 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
