PART |
Description |
Maker |
PC100 KMM366S1623CT-G8 KMM366S1623CT-GH KMM366S162 |
PC100 SDRAM MODULE Preliminary 初步PC100的内存模
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HB52D328DC-A6B HB52D328DC-A6BL HB52D328DC-B HB52D3 |
256 MB Unbuffered SDRAM S.O.DIMM 32-Mword 隆驴 64-bit, 100 MHz Memory Bus, 2-Bank Module (8 pcs of 16 M 隆驴 16 components) PC100 SDRAM 256 MB Unbuffered SDRAM S.O.DIMM 32-Mword × 64-bit, 100 MHz Memory Bus, 2-Bank Module (8 pcs of 16 M × 16 components) PC100 SDRAM x64 SDRAM Module
|
Elpida Memory
|
KMM366S1623CTY-GL KMM366S1623CTY KMM366S1623CTY-GH |
PC100 SDRAM MODULE
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
KVR100X64C3/256 |
100 Mhz SDRAM 168-pin PC100 Memory Module
|
Kingston Technology
|
KVR100X64C3/128 |
100 Mhz SDRAM 168-pin PC100 DIMM Memory Module
|
Kingston Technology
|
KVR100X64C2L/128 |
100 Mhz SDRAM 168-pin Low Profile PC100 DIMM Memory Module
|
Kingston Technology
|
GMM2649233EFTG |
8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
HYS72V2200GU-10 HYS72V2200GU-8 HYS64V2200GU-10 HYS |
Network Cable Assembly; Connector Type A:T568A/B Modular Plug; Connector Type B:T568A/B Modular Plug; Cable Length:7ft; Approval Categories:Augmented Category 6 standards; cord color per TIA/EIA-606 standard RoHS Compliant: Yes 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 72 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 KPT 3C 3#20 SKT PLUG 3.3 2米x 64/72-Bit一银行内存模块3.3 4米64/72-Bit 2银行内存模块 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG SIEMENS A G
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V436416S04VTG |
3.3 Volt 16M x 64 High Performance PC100 and 100 MHZ SDRAM Module with Unbuffered(3.3V 16M*64位高性能无缓冲器PC10000MHZSDRAM模块) 3.3伏特16米x 64高性能00兆赫PC100的内存模块,缓冲.3 1,600 * 64位高性能无缓冲器PC100的和100MHZSDRAM模块
|
Mosel Vitelic, Corp.
|
HYM71V16655AT8 |
PC100 SDRAM Unbuffered DIMM
|
Hynix Semiconductor
|
KMM464S1724T1 |
PC100 144pin SDRAM SODIMM
|
Samsung Semiconductor
|