| PART |
Description |
Maker |
| PDM505HA |
MOSFET MODULE Dual 50A/500V
|
NIEC[Nihon Inter Electronics Corporation]
|
| PC50F5 |
FRD MODULE 50A/500V/trr:90nsec
|
NIEC[Nihon Inter Electronics Corporation]
|
| OM6233SS OM6227SS OM6233SSV OM6231SS OM6232SS OM62 |
1000V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6D package
400V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6E package
1000V Dual N-Channel MOSFET in a S-6E package
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6D, SIP-6
400V Dual N-Channel MOSFET in a S-6E package 400V双N沟道MOSFET的在一个S - 6E条包
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6E, SIP-6
|
International Rectifier
Electronic Theatre Controls, Inc.
Atmel, Corp.
|
| FDA24N50 |
500V N-Channel MOSFET N-Channel MOSFET; Package: TO-3PN; No of Pins: 3; Container: Rail 24 A, 500 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel MOSFET 500V, 24A, 0.19ヘ
N-Channel MOSFET 500V, 24A, 0.19Ω
|
Fairchild Semiconductor, Corp.
|
| PDMB50A6 |
IGBT MODULE Dual 50A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| OM6215SS OM6214SS OM6216SS OM6217SS |
30 A, 100 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE
100V Dual N-Channel MOSFET in a S-6 package
400V Dual N-Channel MOSFET in a S-6 package
500V Dual N-Channel MOSFET in a S-6 package
200V Dual N-Channel MOSFET in a S-6 package
|
List of Unclassifed Manufacturers
ETC
International Rectifier
|
| MJ10015 MJ10016 |
POWER TRANSISTORS(50A,400-500V,250W)
|
MOSPEC[Mospec Semiconductor]
|
| IRC840 |
Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)
Hexfet? Power MOSFET
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
500V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
IRF[International Rectifier]
|
| IRF840AL IRF840AS IRF840ASTRR |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 8A条（丁）|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）最大值\u003d 0.85ohm，身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF830S IRF830STRL IRF830STRR |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=500V Rds(on)=1.5ohm Id=4.5A)
Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)
Power MOSFET(Vdss=500V/ Rds(on)=1.5ohm/ Id=4.5A)
|
IRF[International Rectifier]
|
| IRF820 IRF820PBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)
Power MOSFET(Vdss=500V/ Rds(on)=3.0ohm/ Id=2.5A)
|
IRF[International Rectifier]
|
| BSM254F |
TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 500V V(BR)DSS | 35A I(D)
|
|
