| PART |
Description |
Maker |
| RF2460 |
PCS CDMA LOW NOISE AMPLIFIER/MIXER 1500MHZ TO 2200MHZ DOWNCONVERTER
|
RF Micro Devices, Inc.
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| ICL7621 ICL7621DCBA ICL7621DCBA-T ICL7621DCPA ICL7 |
(ICL7621 / ICL7641 / ICL7642) Dual/Quad / Low Power CMOS Operational Amplifiers
High-Performance Impact-X<TM> PAL<R> Circuits 20-CFP -55 to 125
Dual/Quad, Low Power CMOS Operational Amplifiers
Dual/Quad Low Power CMOS Operational Amplifiers
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| TS27M4AC TS27M4AI TS27M4AM TS27M4BC TS27M4BI TS27M |
PRECISION LOW POWER CMOS CMOS OP-AMPS
PRECISION LOW POWER CMOS QUAD OPERATIONAL AMPLIFIERS
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| AS6UA25616-TI AS6UA25616 AS6UA25616-BC AS6UA25616- |
2.3V to 3.6V 256K×16 Intelliwatt low-power CMOS SRAM with one chip enable(2.3V 3.6V 256K×16 Intelliwatt 低功CMOS 静态RAM（带单片使能
2.3V to 3.6V 256K16 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K6 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K×16 Intelliwatt?/a> low-power CMOS SRAM with one chip enable
|
Alliance Semiconductor Corporation
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| KM6264B KM6264BLP-7L KM6264BLG-10 KM6264BLG-10L KM |
8K x 8 bit CMOS static RAM, 100ns, low low power
8K x 8 bit Low Power CMOS Static RAM
8Kx8 bit Low Power CMOS Static RAM 8Kx8位低功耗CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IC62C1024L IC62C1024L-35Q IC62C1024L-35QI IC62C102 |
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
From old datasheet system
55ns; 5V; 128K x 8 low power CMOS static RAM
35ns; 5V; 128K x 8 low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| AD73322LARU AD73322LYR EVAL-AD73322LEB AD73322LAST |
Low Cost/ Low Power CMOS General-Purpose Dual Analog Front End
Low Cost, Low Power CMOS General-Purpose Dual Analog Front End
KNOB, RT25; Series:29JF RoHS Compliant: Yes
|
Analog Devices, Inc.
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| IC62C256 IC62C256-45T IC62C256-45TI IC62C256-45U I |
70ns; 5V; 32K x 8 low power CMOS static RAM
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
45ns; 5V; 32K x 8 low power CMOS static RAM
|
Integrated Circuit Solution...
ICSI[Integrated Circuit Solution Inc]
|
| TS271 TS271CAC TS271CB TS271IAI TS271IBI TS271MAM |
PROGRAMMABLE LOW POWER CMOS SINGLE OP-AMP
CMOS PROGRAMMABLE LOW POWER SINGLE OPERATIONAL AMPLIFIER
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
