| PART |
Description |
Maker |
| RJK0452DPB13 RJK0452DPB-00-J5 |
40V, 45A, 3.5m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| DAN803 DAP803 DA4148 DA4148A DA4148K |
Switch Mode Power Supply; Output Power:10W; No. of Outputs:2; Output 1 VDC :12VDC; Output Current 1:0.45A; Output 2 VDC -:12VDC; Power Supply Mounting:PC Board; Leaded Process Compatible:No; Output Current:0.45A RoHS Compliant: Yes
Small Signal Diode Arrays
|
DIOTEC SEMICONDUCTOR AG
DIOTEC[Diotec Semiconductor]
Diotec Elektronische
|
| ZMY1 ZMY33 ZMY51 ZMY15 ZMY20 ZMY47 ZMY91 ZMY10 ZMY |
Silicon Planar Zener Diodes
SILICON PLANAR POWER ZENER DIODES
Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41
surface mount silicon Zener diodes
|
Honey Technology
SEMTECH[Semtech Corporation]
|
| STP45NE06 STP45NE06FP STP45NEO6 |
N-CHANNEL 60V - 0.022 OMH - 45A - TO-220/TO-220FP STRIPFET POWER MOSFET
N - CHANNEL 60V - 0.022ohm - 45A - TO-220/TO-220FP STripFETO POWER MOSFET
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| IDB09E120 Q67040-S4384 Q67040-S4479 IDP09E120 |
Fast Switching EmCon Diode 快速开关快恢复二极
From old datasheet system
Silicon Power Diodes - 9A EmCon in TO220-2
Silicon Power Diodes - 9A EmCon in TO263
|
INFINEON[Infineon Technologies AG]
|
| RFP45N06 RF1S45N06SM RFG45N06 FN3574 |
45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs 45 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
45A/ 60V/ 0.028 Ohm/ N-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| RFP45N06LE RF1S45N06LESM FN4076 |
From old datasheet system
45A/ 60V/ 0.028 Ohm/ Logic Level N-Channel Power MOSFETs
45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| UT50N03G-TM3-T UT50N03G-TN3-R UT50N03G-TN3-T UT50N |
45A, 25V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N0DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| IRF054SMD |
N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET（减振钢板基本：60V的，身份证（续）5A条，的Rds（on）：0.027Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本0V的，身份证（续）5A条，的Rds（on.027Ω））
|
SemeLAB
Seme LAB
International Rectifier
http://
|
