| PART |
Description |
Maker |
| CGY2014TT |
GSM/DCS/PCS power amplifier(GSM/DCS/PCS 功率放大
|
Philips Semiconductors
|
| RF2173_06 RF2173 RF2173PCBA-41X RF217306 |
3V GSM POWER AMPLIFIER
|
RFMD[RF Micro Devices]
|
| MRF18085ALSR3 MRF18085AR3 MRF18085A |
GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF18085B |
MRF18085B, MRF18085BR3, MRF18085BLSR3 GSM/GSM EDGE 1.9-1.99 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| PCF5078 PCF5078T |
Power amplifier controller for GSM and PCN systems
|
NXP Semiconductors
|
| AWT6223R AWT6223RM26P8 AWT6223RM26P9 |
WCDMA/GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| TQM7M4007 |
Quad-Band GSM / GPRS Power Amplifier Module
|
TriQuint Semiconductor
|
| RMPA1850 |
Quad Band GSM/GPRS Power Amplifier Module
|
FAIRCHILD[Fairchild Semiconductor]
|
| MRF18085AR3 MRF18085ALSR3 |
RF Power Field Effect Transistors
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
Freescale (Motorola)
|
| PF01410 PF01410A |
MOS FET Power Amplifier Module for GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| SKY77336 |
Power Amplifier Module for Quad-Band GSM/GPRS/EDGE
|
Skyworks Solutions Inc.
|
| PF01411 PF01411A |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
