| PART |
Description |
Maker |
| IXTY64N055T IXTP64N055T |
N-Channel Enhancement Mode Avalanche Rated
TrenchMV Power MOSFET N-Channel EngancementMode Avalanche Rated
|
IXYS Corporation
|
| RFP12N06RLE RFD12N06RLESM RFD12N06RLE FN2407 |
From old datasheet system
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs
12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N沟道,逻辑电平,功率MOS场效应管) 12 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
INTERSIL[Intersil Corporation]
Fairchild Semiconductor, Corp.
|
| IRFAC40 IRFAC40-15 |
Simple Drive Requirements
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE)
|
International Rectifier
|
| BSS806N |
OptiMOS2 Small-Signal-Transistor Ultra Logic level (1.8V rated) Avalanche rated
|
TY Semiconductor Co., Ltd
|
| BUZ104S Q67040-S4007-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| RFD3055 RFD3055SM RFP3055 FN3648 |
12A/ 60V/ 0.150 Ohm/ N-Channel Power MOSFETs
12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
12A 60V 0.150 Ohm N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| BUZ103S Q67040-S4009-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature)
|
Infineon
Siemens Semiconductor Group
SIEMENS AG
|
| RF1K49086 |
3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFET Enhancement Mode Power MOSFET
3.5A/ 30V/ Avalanche Rated/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET
3.5A, 30V, AVALANCHE RATED, DUAL N-CHANNEL LITTLEFET⒙ ENHANCEMENT MODE POWER MOSFET
3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFETEnhancement Mode Power MOSFET
|
Fairchild Semiconductor Corporation
|
| SPD18P06P08 SPD18P06PG |
SIPMOSò Power-Transistor Features Enhancement mode Avalanche rated
SIPMOS? Power-Transistor Features Enhancement mode Avalanche rated
|
Infineon Technologies AG
|
| IRFE330 JANTXV2N6800U JANTX2N6800U |
REPETITIVE AVALANCHE AND dv/dt RATED
|
IRF[International Rectifier]
|
| IRF510 SIHF510 |
Repetitive Avalanche Rated
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
| BUZ100 C67078-S1348-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) SIPMOS功率晶体管（N通道增强模式雪崩额定dv / dt的评价）
SIPMOS ? Power Transistor
From old datasheet system
|
SIEMENS AG
http://
Infineon
Siemens Semiconductor Group
|
