PART |
Description |
Maker |
RFP30N06LE RF1S30N06LE RF1S30N06LESM |
30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
|
Fairchild Semiconductor HARRIS[Harris Corporation]
|
RFP3055 RFD3055 RFD3055SM |
12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs)
|
HARRIS[Harris Corporation]
|
STP45NE06 STP45NE06FP STP45NEO6 |
N-CHANNEL 60V - 0.022 OMH - 45A - TO-220/TO-220FP STRIPFET POWER MOSFET N - CHANNEL 60V - 0.022ohm - 45A - TO-220/TO-220FP STripFETO POWER MOSFET Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
IRFF9220 2N6847 JANTX2N6847 JANTXV2N6847 |
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF) HEXFET TRANSISTORS THRU-HOLE (TO-205AF) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF) REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)
|
International Rectifier
|
IRF054SMD |
N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET(减振钢板基本:60V的,身份证(续)5A条,的Rds(on):0.027Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本0V的,身份证(续)5A条,的Rds(on.027Ω))
|
SemeLAB Seme LAB International Rectifier http://
|
IRFAC40 IRFAC40-15 |
Simple Drive Requirements REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-204AA/AE) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE)
|
International Rectifier
|
RFG45N0602 RFP45N06 RFG45N06 RF1S45N06SM |
45A, 60V, 0.028 Ohm, N-Channel Power
|
Fairchild Semiconductor
|
RFP8P06LE RFD8P06LESM RFD8P06LE FN4273 |
8A/ 60V/ 0.300 Ohm/ ESD Rated/ Logic Level/ P-Channel Power MOSFET From old datasheet system 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET 8A, 60V, 0.300 Ohm, ESD Rated, P-Channel Power MOSFET(8A, 60V, 0.300Ω,额定静电释放P沟道功率MOS场效应管)
|
INTERSIL[Intersil Corporation]
|
NTB45N06LT4 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 45A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 45A条(丁)|63AB
|
ON Semiconductor
|
JANTXV2N7224 JANTX2N7224 2N7224 IRFM150 |
HEXFET Transistor(HEXFET 晶体 的HEXFET晶体管(之HEXFET晶体管) REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET? TRANSISTOR 100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
|
International Rectifier, Corp. IRF[International Rectifier]
|
RF1K49088 |
3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET Enhancement Mode Power MOSFET 3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET⑩ Enhancement Mode Power MOSFET 3.5A 30V Avalanche Rated Logic Level Dual N-Channel LittleFET Enhancement Mode Power MOSFET 3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFETEnhancement Mode Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
IRFE330 JANTXV2N6800U JANTX2N6800U |
REPETITIVE AVALANCHE AND dv/dt RATED
|
IRF[International Rectifier]
|