| PART |
Description |
Maker |
| NESG340033 NESG340033-T1B |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
| BFR740L3RH |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| BFP620 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| NESG3400M01 NESG3400M01-T1 |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
| NESG340034 NESG340034-T1 |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
| BFU610F |
NPN Wideband Silicon Germanium RF Transistor
|
Philips Semiconductors
NXP
|
| RQG1004UPAQL RQG1004UP-TL-E |
35 mA, 3.5 V, NPN, SiGe, SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.55 MM HEIGHT, MFPAK-4
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics, Corp.
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| RQG1003UQ-TL-E |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics Corporation.
|
| BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4
|
Infineon
|
| 1N55 1N64 1N73 1N107 1N273 1N277 1N279 1N281 1N289 |
1N55
1N64
1N73
1N3082
1N3865
1W569 1W634
AA112 AA113 AA117 AA118 AA119
DR213
HG5007 HG50089
T7G T17G T19G
GERMANIUM DOIDES
GERMANIUM DOIDES
GERMANIUM DIODES
|
American Microsemiconductor Inc.
American Microsemicondu...
American Accurate Compo...
|
| 2N167A |
NPN GERMANIUM TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
|
