| PART |
Description |
Maker |
| IRF610A |
Advanced Power MOSFET
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为200V，导通电阻为1.5Ω，漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRFR130 IRFR130A IRFU130A IRFR130ATF IRFR130ATM IR |
Avalanche Rugged Technology
N-CHANNEL POWER MOSFET
100V N-Channel A-FET
Advanced Power MOSFET 先进的功率MOSFET
(IRFR130A / IRFU130A) Advanced Power MOSFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| MMFT107T1D MMFT107T3 MMFT107T1 MMFT107 MMFT107T1-D |
Power MOSFET 250 mA, 200 Volts N-Channel SOT-223
Power MOSFET 250 mA / 200 Volts
Power MOSFET 250 mA, 200 Volts 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
|
ONSEMI[ON Semiconductor]
|
| IRFW520A IRFI520A IRFWI520A IRFW520ATM |
Advanced Power MOSFET
N-CHANNEL POWER MOSFET
100V N-Channel A-FET
Advanced Power MOSFET 9.2 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| IRFBC40 |
CAP CER 1000PF 100V 20% X7R 0603 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
6.2A/ 600V/ 1.200 Ohm/ N-Channel Power MOSFET
6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
|
Intersil, Corp.
Intersil Corporation
|
| MTW32N20E MTW32N20E-D |
Power MOSFET 32 Amps, 200 Volts N-Channel TO-247
Power MOSFET 32 Amps, 200 Volts(32A,200V的功率MOSFET)
|
ON Semiconductor
|
| SPM4M024-100 SPC8M075-006 SPC8M045-010 SPC8M030-02 |
6 A, 1000 V, 2 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 130 A, 60 V, 0.006 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 120 A, 300 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 40 A, 600 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 350 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 30 A, 200 V, 0.075 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 45 A, 100 V, 0.03 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 30 A, 200 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 300 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Sensitron Semiconductor
http://
|
| SFS9540 |
Advanced Power MOSFET 10.7 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRF1010NLPBF IRF1010NSPBF IRF1010NSTRRPBF IRF1010N |
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
Advanced Process Technology
|
International Rectifier
|
| IRFP250N IRFP250 |
Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)
N-Channel(Hexfet Transistors)
Power MOSFET(Vdss = 200 V Rds(on)=0.075ohm Id=30A)
Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) 功率MOSFET（减振钢板基本\u003d 200第五的Rdson）\u003d 0.075ohm，身份证\u003d 30A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
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