| PART |
Description |
Maker |
| SLD-1026Z |
3 Watt Discrete LDMOS Device Plastic Surface Mount Package
|
SIRENZA[SIRENZA MICRODEVICES]
|
| SLD-2083CZ |
12 Watt Discrete LDMOS FET in Ceramic Package
|
sirenza.com
SIRENZA[SIRENZA MICRODEVICES]
|
| 0809LD30P |
Compant High-Insulation Power Relay, Polarized, 10A
30 Watt / 28V / 1 Ghz LDMOS FET
30 WATT 28V 1 GHz LDMOS FET
30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| SLD2083CZ |
10 Watt high performance LDMOS transistor designed
|
sirenza
|
| SLD2083CZ |
10 Watt high performance LDMOS transistor designed for operation to 2700MHz
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| AN1226 |
UNDERSTANDING LDMOS DEVICE FUNDAMENTALS
|
SGS Thomson Microelectronics
|
| AN1228 |
RELATE LDMOS DEVICE PARAMETERS TO RF PERFORMANCE
|
SGS Thomson Microelectronics
|
| TGF2023-05 |
25 Watt Discrete Power GaNon SiCHEMT
|
TriQuint Semiconductor
|
| TGF2952 TGF2952-15 |
7 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| SSM6E03TU |
Multi-chip discrete device (P-ch N-ch)
|
TOSHIBA
|
| MPSW45_D MPSW45A ON2353 MPSW45 |
One Watt Darlington Transistors(NPN Silicon)
*Motorola Preferred Device
From old datasheet system
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
