| PART |
Description |
Maker |
| AS081C320W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| AS081C40W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| SPLAH903 |
Nanostack Pulsed Laser Diode Array 75 W Peak Power
|
OSRAM GmbH
|
| AS098Q1200W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7663JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6240GP |
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
Renesas Electronics Corporation
|
| NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|
| SLD324ZT-21 SLD324ZT |
High-Power Density 2W Laser Diode
798 nm, LASER DIODE M-272, 12 PIN
|
SONY
NXP Semiconductors N.V.
|
| BZY93C9V1R BZY93C75R BZY93C47R |
Diode Zener Single 9.05V 6% 20W 2-Pin DO-4
Diode Zener Single 74.5V 6% 20W 2-Pin DO-4
Diode Zener Single 47V 6% 20W 2-Pin DO-4
|
New Jersey Semiconductor
|
| MMAD1108 MMAD1108E3/TR13 |
Switching Diode Array Steering Diode TVS Array
Diode Array; UNIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE
|
Microsemi Corporation
Microsemi, Corp.
|
