| PART |
Description |
Maker |
| FAT-870-40 |
INFRARED HIGH POWER LED ARRAY
|
Roithner LaserTechnik GmbH
|
| AS081Q3000W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| ICX658ALA ICX659ALA |
(ICX658AxA / ICX659AxA) New Generation EXview HAD CCD Ultrahigh-Sensitivity Near Infrared Structure
|
ETC
|
| UPA1601 UPA1601GS UPA1601CX |
Power MOS FET array
UPA1601DataSheet|DataSheet[03/1994]
MONOLITHIC POWER MOSFET ARRAY
|
NEC
|
| MIE-114A1 114A1 |
Infrared Emitting Diodes (IRED)
GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-324A4 324A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| UPA1552H |
MOS FIELD EFFECT POWER TRANSISTOR ARRAY (FAST SWITCHING N-CHANNEL SILICON POWER MOS FET ARRAY)
|
NEC
|
| 2SJ502 |
Ultrahigh-Speed Switching Applications 超高速开关应
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| 2SC5303 |
25 A, 800 V, NPN, Si, POWER TRANSISTOR
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
|
Sanyo Semicon Device
|
| APA3010F3C |
3.0x1.0 mm RIGHT ANGLE INFRARED EMITING DIODE 2 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Kingbright, Corp.
Kingbright Corporation
|
| QED123 QED122 QED121 QED122A3R0 |
PLASTIC INFRARED LIGHT EMITTING DIODE 4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
