| PART |
Description |
Maker |
| M100FG |
10000 V rectifier 10-100 mA forward current,200 ns recovery time
|
Voltage Multipliers, Inc.
|
| SDA20000UF SDA25000UF SDA2500UF SDA7500UF SDA10000 |
0.5 AMPS 2.5kV thru 25kV ULTRAFAST RECOVERY RECTIFIER ASSEMBLY 0.5 A, 10000 V, SILICON, SIGNAL DIODE
|
Solid State Devices, Inc.
SSDI[Solid States Devices, Inc]
|
| LT1457ACN8PBF |
Dual, Precision JFET Input Op Amp; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C DUAL OP-AMP, 45000 uV OFFSET-MAX, 1.7 MHz BAND WIDTH, PDIP8
|
Linear Technology, Corp.
|
| SP4-2512/883 SP2-2512/883 SP4-2510-2 SP3-2512-2 SP |
OP-AMP, 10000 uV OFFSET-MAX, 12 MHz BAND WIDTH, CQCC20 CERAMIC, LCC-20
OP-AMP, 10000 uV OFFSET-MAX, 12 MHz BAND WIDTH, MBCY8 METAL CAN-8
OP-AMP, 8000 uV OFFSET-MAX, 12 MHz BAND WIDTH, CQCC20
OP-AMP, 10000 uV OFFSET-MAX, 12 MHz BAND WIDTH, PDIP8
|
Ecliptek, Corp.
|
| SDA5000 SDA5000HF SDA12500 SDA15000 SDA8000 SDA100 |
STANDARD RECOVERY HIGH VOLTAGE RECTIFIER
0.5 A, 10000 V, SILICON, SIGNAL DIODE
0.5 A, 12500 V, SILICON, SIGNAL DIODE
0.5 A, 22000 V, SILICON, SIGNAL DIODE
0.5 A, 19000 V, SILICON, SIGNAL DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| NTD10 |
0.3 A, 10000 V, SILICON, SIGNAL DIODE
|
|
| NAND1282R4A2AN6T |
8M X 16 FLASH 1.8V PROM, 10000 ns, PDSO48
|
NUMONYX
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| SFT1305 |
10000 mA, 45 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
SANYO SEMICONDUCTOR CO LTD
|
| SI4840DY-T1-E3 |
10000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
| SDS0402BL-103M-S |
1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR, SMD
|
YAGEO CORP
|
| CTLQ2220CF-103M CENTRALTECHNOLOGIES-CTLQ2220CF-6R8 |
1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR, SMD
|
CENTRAL TECHNOLOGIES
|
|
